Method for controlling the switching speed of bipolar power devices
US5097308A · kind A · utility
5Cited by
10References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 13, 1990 |
| Grant date | Mar 17, 1992 |
| Priority date | — |
| Expiry date | Mar 13, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The switching speed of bipolar power rectifiers is increased by formation of misfit dislocations in the depletion region, spaced from the substrate/epitaxial layer interface, in order to reduce minority carrier lifetime. The misfit dislocations are formed by the introduction of germanium during epitaxy, and are distributed along the silicon/silicon-germanium interface. Preferably, the germanium containing layer is located proximate the center of the depletion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.