Inventor · Mesa, AZ, US

Ali Salih

78Patents
10h-index
51Co-inventors
81Inventor score

Filing activity: Mar 13, 1990 → Dec 16, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US5949124A Edge termination structure Electricity 108 Expired
US7579632B2 Multi-channel ESD device and method therefor Emerging Cross-Sectional Technologies 42 Active
US7538395B2 Method of forming low capacitance ESD device and structure therefor Emerging Cross-Sectional Technologies 23 Active
US9391135B1 Semiconductor device Electricity 17 Active
US9673311B1 Electronic device including a multiple channel HEMT Electricity 13 Active
US7842969B2 Low clamp voltage ESD device and method therefor Electricity 13 Active
US7812367B2 Two terminal low capacitance multi-channel ESD device Emerging Cross-Sectional Technologies 13 Active
US6756273B2 Semiconductor component and method of manufacturing Electricity 13 Expired
US8089095B2 Two terminal multi-channel ESD device and method therefor Emerging Cross-Sectional Technologies 10 Active
US6344379B1 Semiconductor device with an undulating base region and method therefor Electricity 10 Expired
US9299776B2 Method of forming a semiconductor device including trench termination and trench structure therefor Electricity 9 Active
US7518185B2 Semiconductor component and method of manufacturing Electricity 7 Active
US5102810A Method for controlling the switching speed of bipolar power devices Emerging Cross-Sectional Technologies 7 Expired
US5324685A Method for fabricating a multilayer epitaxial structure Emerging Cross-Sectional Technologies 6 Expired
US8236625B2 Method of forming a multi-channel ESD device Emerging Cross-Sectional Technologies 5 Active
US5097308A Method for controlling the switching speed of bipolar power devices Electricity 5 Expired
US7955941B2 Method of forming an integrated semiconductor device and structure therefor Electricity 5 Active
US9799646B2 Cascode configured semiconductor component Electricity 5 Active
US9748224B2 Heterojunction semiconductor device having integrated clamping device Electricity 5 Active
US10741682B2 High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance Electricity 4 Active
US9129889B2 High electron mobility semiconductor device and method therefor Electricity 4 Active
US9502550B2 High electron mobility semiconductor device and method therefor Electricity 4 Active
US8431959B2 Method of forming an ESD protection device and structure therefor Electricity 4 Active
US8093133B2 Transient voltage suppressor and methods Electricity 4 Active
US9620598B2 Electronic device including a channel layer including gallium nitride Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.