Method for forming distributed barrier compound semiconductor contacts
US5098859A · kind A · utility
32Cited by
4References
5Claims
0Family size
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Key dates
| Filing date | Oct 3, 1988 |
| Grant date | Mar 24, 1992 |
| Priority date | — |
| Expiry date | Oct 3, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
The control of barriers to carrier flow in a contact between a metal and a higher band gap semiconductor employing an intermediate lower band gap semiconductor with doping and greater than 1.5% lattice mismatch. A WSi metal contact of doped InAs on GaAs of 7.times.10.sup.-6 ohm/cm.sup.2 is provided. This is a continuation application of pending prior application Ser. No. 183,473, filed on Apr. 15, 1988 now abandoned which is a continuation of Ser. No. 876,063, filed on June 14, 1986, now abandoned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.