Copper dry etch process using organic and amine radicals
US5100499A · kind A · utility
50Cited by
3References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 25, 1991 |
| Grant date | Mar 31, 1992 |
| Priority date | — |
| Expiry date | Jun 25, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/02
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An etch process for etching copper layers that is useable in integrated circuit fabrication is disclosed which utilizes organic and amine radicals to react with copper, preferrable using photoenergizing and photodirecting assistance of high intensity ultraviolet light, to produce a product which is either volatile or easily removed in solution. The process is anisotropic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.