Method for controlling the switching speed of bipolar power devices
US5102810A · kind A · utility
7Cited by
7References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 11, 1991 |
| Grant date | Apr 7, 1992 |
| Priority date | — |
| Expiry date | Apr 11, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/06
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The switching speed of bipolar power rectifiers is increased by formation of misfit dislocations in the depletion region, spaced from the substrate/epitaxial layer interface, in order to reduce minority carrier lifetime. The misfit dislocations are formed by the introduction of germanium during epitaxy, and are distributed along the silicon/silicon-germanium interface. Preferably, the germanium containing layer is located proximate the center of the depletion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.