Semiconductor light emitting device and method of fabricating the same
US5103271A · kind A · utility
78Cited by
1References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 27, 1990 |
| Grant date | Apr 7, 1992 |
| Priority date | — |
| Expiry date | Sep 27, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
Abstract
A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.l-x-y P (0.ltoreq.x, y.ltoreq.l) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.l) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer even though its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.