Conductivity-modulation metal oxide field effect transistor with single gate structure

US5105243A · kind A · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Akio Nakagawa · Hiratsuka, JP
• Yoshihiro Yamaguchi · Saitama, JP
• Kiminori Watanabe · Kawasaki, JP

Key dates

• Filing date: Aug 25, 1989
• Grant date: Apr 14, 1992
• Expiry date: Aug 25, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/115

Abstract

There is disclosed a single-gate type conductivity-modulation field effect transistor having a first base layer, a second base layer, and a source layer formed in the second base layer. A source electrode is provided on a surface of the first base layer, for electrically shorting the second base layer with the source layer. A drain layer is provided in the first base layer surface. A drain electrode is formed on the layer surface to be in contact with the drain layer. A gate electrode is insulatively provided above the layer surface, for covering a certain surface portion of the second base layer which is positioned between the first base layer and the source layer to define a channel region below the gate electrode. A heavily-doped semiconductor layer is formed in the drain layer to have the opposite conductivity type to that of the drain layer. This semiconductor layer is in contact with the drain electrode. When the transistor is turned off, this layer facilitates carriers accumulated in the first base layer to flow into the drain electrode through the drain layer, thereby accelerating dispersion of the carriers in said transistor.