Gate turn-off power semiconductor component

US5105244A · kind A · utility

Assignee

• Asea Brown Boveri, S.A. · CH

Inventor

• Friedhelm Bauer · Suhr, CH

Key dates

• Filing date: Jun 11, 1991
• Grant date: Apr 14, 1992
• Expiry date: Jun 11, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/136

Abstract

In a MOS-controlled thyristor MCT, the second base layer (16) is pulled to the cathode-side surface of the semiconductor substrate (1) between the MCT until cells. At this point, a collector zone (20), which is doped oppositely to the second base layer (16) is arranged which is connected to the cathode contact (2) and reaches into the second base layer (16). Together with the second base layer (16) and an additional opposite anode short circuit, the collector zone (20) forms an inverse diode structure (11) which saves an external free-wheeling diode when inductive loads are switched.