MIS type diamond field-effect transistor with a diamond insulator undercoat
US5107315A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1991 |
| Grant date | Apr 21, 1992 |
| Priority date | — |
| Expiry date | Mar 12, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
Abstract
Disclosed herein is a MIS type diamond field-effect transistor comprising a diamond semiconductor layer provided as an active layer by chemical vapor deposition (CVD), and a diamond insulator layer provided on the diamond semiconductor layer also by CVD, a gate electrode being formed on the diamond insulator layer, wherein a diamond insulator undercoat is provided on a non-diamond substrate by CVD, and the diamond semiconductor layer and the diamond insulator layer are sequentially provided on the diamond insulator undercoat. The MIS type diamond field-effect transistor with this structure ensures that in the manufacture thereof, a diamond insulator undercoat of large area can be formed on a non-diamond substrate of CVD, whereby a large number of elemental devices can be fabricated simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.