Protective layer for high voltage devices
US5107323A · kind A · utility
29Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1991 |
| Grant date | Apr 21, 1992 |
| Priority date | — |
| Expiry date | May 16, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semi-insulating layer is formed over a high voltage device in order to protect the device substrate from charge buildup. A layer comprising silicon oxynitride is deposited over the semi-insulating layer in order to prevent arcing between device electrodes and provide corrosion resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.