John W. Osenbach
84Patents
13h-index
107Co-inventors
87Inventor score
Filing activity: May 13, 1991 → Jan 25, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5851849A | Process for passivating semiconductor laser structures with severe steps in surface topography | Electricity | 156 | Expired |
| US7224047B2 | Semiconductor device package with reduced leakage | Electricity | 41 | Expired |
| US5418190A | Method of fabrication for electro-optical devices | Electricity | 38 | Expired |
| US8766436B2 | Moisture barrier for a wire bond | Electricity | 38 | Active |
| US5107323A | Protective layer for high voltage devices | Electricity | 29 | Expired |
| US8492911B2 | Stacked interconnect heat sink | Electricity | 26 | Active |
| US6265757A | Forming attached features on a semiconductor substrate | Electricity | 25 | Expired |
| US5990560A | Method and compositions for achieving a kinetically controlled solder bond | Performing Operations; Transporting | 24 | Expired |
| US8987137B2 | Method of fabrication of through-substrate vias | Electricity | 24 | Active |
| US6117794A | Method for improved metal oxide bonding of optical elements | Electricity | 18 | Expired |
| US5583078A | Method for fabricating a planar dielectric | Electricity | 18 | Expired |
| US10026723B2 | Photonic integrated circuit package | Electricity | 15 | Active |
| US6265240A | Method and apparatus for passively aligning components on semiconductor dies | Physics | 15 | Expired |
| US5168089A | Substantially facet-free selective epitaxial growth process | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6862378B2 | Silicon-based high speed optical wiring board | Physics | 13 | Expired |
| US6517258B1 | Plastic packaged optoelectronic device | Electricity | 12 | Expired |
| US6195191A | Optical devices having improved temperature stability | Physics | 11 | Expired |
| US5440575A | Article comprising a semiconductor laser with stble facet coating | Electricity | 11 | Expired |
| US8183698B2 | Bond pad support structure for semiconductor device | Electricity | 11 | Active |
| US8742535B2 | Integration of shallow trench isolation and through-substrate vias into integrated circuit designs | Electricity | 11 | Active |
| USH665H | Resistive field shields for high voltage devices | General | 10 | Active |
| US9324557B2 | Method for fabricating equal height metal pillars of different diameters | Electricity | 10 | Active |
| US8378485B2 | Solder interconnect by addition of copper | Electricity | 10 | Active |
| US5989354A | Method for removing thin, organic materials from semiconductor dies and micro-lenses | Chemistry; Metallurgy | 10 | Expired |
| US7277173B1 | Active optical alignment using MEMS mirrors | Physics | 10 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.