Method for forming a metal contact
US5108951A · kind A · utility
66Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1990 |
| Grant date | Apr 28, 1992 |
| Priority date | — |
| Expiry date | Nov 5, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.