Fusen Chen
103Patents
26h-index
62Co-inventors
93Inventor score
Filing activity: Nov 3, 1988 → Jul 8, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6679981B1 | Inductive plasma loop enhancing magnetron sputtering | Electricity | 271 | Expired |
| US5903428A | Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same | Emerging Cross-Sectional Technologies | 231 | Expired |
| US6277249A | Integrated process for copper via filling using a magnetron and target producing highly energetic ions | Electricity | 195 | Expired |
| US6274008A | Integrated process for copper via filling | Electricity | 155 | Expired |
| US6217721A | Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer | Electricity | 121 | Expired |
| US6784096B2 | Methods and apparatus for forming barrier layers in high aspect ratio vias | Electricity | 114 | Expired |
| US5130268A | Method for forming planarized shallow trench isolation in an integrated circuit and a structure formed thereby | Electricity | 96 | Expired |
| US6306265A | High-density plasma for ionized metal deposition capable of exciting a plasma wave | Electricity | 82 | Expired |
| US6139697A | Low temperature integrated via and trench fill process and apparatus | Electricity | 79 | Expired |
| US7026238B2 | Reliability barrier integration for Cu application | Electricity | 78 | Expired |
| US5260229A | Method of forming isolated regions of oxide | Electricity | 73 | Expired |
| US5108951A | Method for forming a metal contact | Electricity | 66 | Expired |
| US6451177B1 | Vault shaped target and magnetron operable in two sputtering modes | Electricity | 61 | Expired |
| US6919275B2 | Method of preventing diffusion of copper through a tantalum-comprising barrier layer | Electricity | 59 | Expired |
| US5410176A | Integrated circuit with planarized shallow trench isolation | Electricity | 57 | Expired |
| US5877087A | Low temperature integrated metallization process and apparatus | Electricity | 51 | Expired |
| US5270254A | Integrated circuit metallization with zero contact enclosure requirements and method of making the same | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6399479B1 | Processes to improve electroplating fill | Electricity | 38 | Expired |
| US6974771B2 | Methods and apparatus for forming barrier layers in high aspect ratio vias | Electricity | 36 | Expired |
| US7253109B2 | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system | Electricity | 35 | Expired |
| US6758947B2 | Damage-free sculptured coating deposition | Electricity | 35 | Expired |
| US5841624A | Cover layer for a substrate support chuck and method of fabricating same | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6066358A | Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer | Electricity | 33 | Expired |
| US6120844A | Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer | Electricity | 33 | Expired |
| US7294574B2 | Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement | Electricity | 28 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.