Multicellular FET having a Schottky diode merged therewith
US5111253A · kind A · utility
202Cited by
16References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1990 |
| Grant date | May 5, 1992 |
| Priority date | — |
| Expiry date | Aug 28, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A semiconductor power switching device comprises a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of Schottky barrier portions. The ratio of Schottky barrier contact area to FET cell area in the overall device may be adjusted to tailor the device for operation at specific current densities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.