Buried channel heterojunction field effect transistor
US5111255A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1990 |
| Grant date | May 5, 1992 |
| Priority date | — |
| Expiry date | Jun 5, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2059
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high transconductance field effect transistor is realized by controlling the doping level in a conducting channel buried beneath a heterointerface. In one exemplary embodiment, a channel comprising an undoped, high mobility, narrow band gap quantum well in combination with an intermediate band gap layer is formed beneath a heterointerface. The heterojunction interface is between a wide band gap layer and the quantum well region. A charge sheet having the same conductivity type as the wide bandgap layer is formed near the heterointerface. Advantageously, the transconductance is enhanced by conduction in the undoped filled quantum well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.