Philip Kiely
15Patents
11h-index
8Co-inventors
61Inventor score
Filing activity: Jun 5, 1990 → Jun 27, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5978398A | Long wavelength vertical cavity surface emitting laser | Electricity | 31 | Expired |
| US6185240A | Semiconductor laser having electro-static discharge protection | Electricity | 26 | Expired |
| US5963576A | Annular waveguide vertical cavity surface emitting laser and method of fabrication | Electricity | 24 | Expired |
| US5953355A | Semiconductor laser package with power monitoring system | Electricity | 22 | Expired |
| US5719892A | Hybrid mirror structure for a visible emitting VCSEL | Electricity | 19 | Expired |
| US5111255A | Buried channel heterojunction field effect transistor | Electricity | 18 | Expired |
| US6151344A | Automatic power control of semiconductor laser | Electricity | 17 | Expired |
| US6160830A | Semiconductor laser device and method of manufacture | Electricity | 13 | Expired |
| US6016326A | Method for biasing semiconductor lasers | Electricity | 12 | Expired |
| US6084900A | Annular waveguide vertical cavity surface emitting laser array and method of fabrication | Electricity | 12 | Expired |
| US5748661A | Integrated lateral detector and laser device and method of fabrication | Electricity | 11 | Expired |
| US5703892A | Method of mode detection and control in semiconductor lasers | Electricity | 5 | Expired |
| US6356571B1 | Semiconductor laser device and method of manufacture | Electricity | 4 | Expired |
| US5923696A | Visible light emitting vertical cavity surface emitting laser with gallium phosphide contact layer and method of fabrication | Electricity | 3 | Expired |
| US8036539B2 | Gigabit ethernet longwave optical transceiver module having amplified bias current | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.