Charge-coupled device (CCD) image sensor operable in either interlace or non-interlace mode
US5111263A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 8, 1991 |
| Grant date | May 5, 1992 |
| Priority date | — |
| Expiry date | Feb 8, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A charge-coupled device (CCD) image sensor, which can be operated either in the interlace mode or in the non-interlace mode, includes in a substrate of a semiconductor material a plurality of photodetectors, such as photodiodes, arranged in an array of rows and columns. A separate CCD shift register in the substrate extends along each column of the photodectectors. First and second sets of conductive gates extend transversely across the CCD shift registers with each first gate extending across a portion of the photodetectors in each row and each of the second gates extending across the remaining portion of the photodetectors in each row. A transfer region extends across the substrate from a portion of each of the photodetectors to an adjacent CCD shift register. The transfer regions of alternate photodetectors in each column extends under the first gates of the photodetectors and the transfer regions of the other photodetectors in each column extends under the second gates of the respective photodetectors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.