Target for magnetron-sputtering systems
US5112468A · kind A · utility
11Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1991 |
| Grant date | May 12, 1992 |
| Priority date | — |
| Expiry date | Feb 4, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Targets for magnetron - sputtering systems with a high utilization of material are obtained from ferromagnetic alloys if the amount of hexagonal structural phase is greater than the cubic phase portion and if the hexagonal prism axis (0001) is aligned preferably vertically to the target surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.