Integrated circuit device particularly adapted for high voltage applications
US5113236A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1990 |
| Grant date | May 12, 1992 |
| Priority date | — |
| Expiry date | Dec 14, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon on insulator of integrated circuit comprising a plurality of components typically adopted for high voltage application having a semiconductor substrate of a first conductivity type, an insulating layer provided on the substrate, a semiconductor layer provided on the insulating layer, a number of laterally separated circuit elements forming parts of a number of subcircuits provided in the semiconductor layer, a diffusion layer of a second conductivity type opposite to that of the first conductivity type provided in the substrate and laterally separated from all the other circuit elements and means for holding the diffusion layer at a voltage at least equal to that of the highest potential of any of the subcircuits present in the integrated device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.