Photoresists resistant to oxygen plasmas
US5114827A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 20, 1990 |
| Grant date | May 19, 1992 |
| Priority date | — |
| Expiry date | Sep 20, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention is a modified organic photoresist which is resistant to etching in oxygen-containing plasmas and therefore particularly useful for masking and etching organic polymer materials in VLSI and advanced packaging applications. The invention comprises adding a phosphorous-containing compound to a conventional photoresist. The phosphorous-containing compound is of a type and in an amount effective to substantially prevent etching of the modified photoresist in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of the photoresist or the elasticity or the adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.