Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth
US5114877A · kind A · utility
24Cited by
10References
36Claims
0Family size
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Key dates
| Filing date | Jan 8, 1991 |
| Grant date | May 19, 1992 |
| Priority date | — |
| Expiry date | Jan 8, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In situ removal of selected or patterned portions of quantum well layers is accomplished by photo induced evaporation enhancement to form quantum wire and multiple quantum wires in a semiconductor laser structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.