Gate-drain shield reduces gate to drain capacitance
US5119149A · kind A · utility
11Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1990 |
| Grant date | Jun 2, 1992 |
| Priority date | — |
| Expiry date | Oct 22, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
A gate-drain shield is used to reduce the gate to drain capacitance of a transistor. The gate-drain shield is formed as a conductor that is positioned on the surface of the transistor between the gate and the drain. The conductor is formed on an insulator thereby electrically insulating the conductor from the substrate of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.