Small cell low contact resistance rugged power field effect devices and method of fabrication
US5119153A · kind A · utility
62Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1990 |
| Grant date | Jun 2, 1992 |
| Priority date | — |
| Expiry date | Sep 24, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
Abstract
A multi-cellular power field effect semiconductor device has compact cells including a heavily doped portion of a body region which is self-aligned with respect to an aperture in the gate electrode. The intercept of this heavily doped portion of the body region with the upper surface of the device may also be self-aligned with respect to the aperture and the gate electrode. A method of producing the device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.