Memory cell based on ferro-electric non volatile variable resistive element
US5119329A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 1991 |
| Grant date | Jun 2, 1992 |
| Priority date | — |
| Expiry date | May 13, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An improved memory device based on a non-volatile variable resistance element is disclosed. The resistive element is based on a semiconductor having a resistivity which is determined by the state of polarization of a ferro-electric layer. The semiconductor forms one plate of a parallel plate capacitor having a dielectric comprising the ferro-electric layer. The state of the memory device is determined by measuring the resistivity of the semiconductor layer between two contacts on the semiconductor layer. The state of polarization of the ferro-electric layer is altered by applying a voltage between one of these contacts and the other plate of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.