Methods and apparatus for material deposition
US5119760A · kind A · utility
555Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1990 |
| Grant date | Jun 9, 1992 |
| Priority date | — |
| Expiry date | Jan 26, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention discloses methods and apparatus for depositing thin films of complex (compound) materials, including ferroelectrics, superconductors, and materials with high dielectric constants through a technique which is hereby entitled photo-enhanced chemical vapor deposition and activation (PECVDA). The technique involves the use of multiple heating sources including a resistive heat bias heater, a tuned optical source (UV or laser) and a source (halogen lamps or microwave sources) for applying high energy, rapid thermal pulses in a precise time sequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.