Symetrix, Inc.
175Patents
6Active
175Granted
56Portfolio score
Filing activity: Jan 26, 1990 → Dec 21, 2023 · 4 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5119760A | Methods and apparatus for material deposition | Electricity | 555 | Expired |
| US6110531A | Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition | Electricity | 422 | Expired |
| US5519234A | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current | Electricity | 393 | Expired |
| US7778063B2 | Non-volatile resistance switching memories and methods of making same | Electricity | 229 | Active |
| US6924997B2 | Ferroelectric memory and method of operating same | Physics | 181 | Expired |
| US7639523B2 | Stabilized resistive switching memory | Electricity | 178 | Active |
| US5561307A | Ferroelectric integrated circuit | Electricity | 156 | Expired |
| US7298640B2 | 1T1R resistive memory array with chained structure | Physics | 123 | Expired |
| US7872900B2 | Correlated electron memory | Electricity | 121 | Active |
| US6511718B1 | Method and apparatus for fabrication of thin films by chemical vapor deposition | Electricity | 110 | Expired |
| US5456945A | Method and apparatus for material deposition | Emerging Cross-Sectional Technologies | 108 | Expired |
| US5466629A | Process for fabricating ferroelectric integrated circuit | Electricity | 101 | Expired |
| US6236076A | Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material | Electricity | 94 | Expired |
| US5614252A | Method of fabricating barium strontium titanate | Electricity | 93 | Expired |
| US6051858A | Ferroelectric/high dielectric constant integrated circuit and method of fabricating same | Electricity | 92 | Expired |
| US5463244A | Antifuse programmable element using ferroelectric material | Electricity | 84 | Expired |
| US5468684A | Integrated circuit with layered superlattice material and method of fabricating same | Electricity | 78 | Expired |
| US5540772A | Misted deposition apparatus for fabricating an integrated circuit | Emerging Cross-Sectional Technologies | 77 | Expired |
| US5759923A | Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits | Electricity | 75 | Expired |
| US5316579A | Apparatus for forming a thin film with a mist forming means | Emerging Cross-Sectional Technologies | 74 | Expired |
| US5434102A | Process for fabricating layered superlattice materials and making electronic devices including same | Electricity | 73 | Expired |
| US5523964A | Ferroelectric non-volatile memory unit | Physics | 71 | Expired |
| US6809949B2 | Ferroelectric memory | Physics | 71 | Expired |
| US5481490A | Ferroelectric memory | Electricity | 68 | Expired |
| US6370056B1 | Ferroelectric memory and method of operating same | Physics | 68 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.