Anti-fuse structures and methods for making same
US5120679A · kind A · utility
108Cited by
10References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1991 |
| Grant date | Jun 9, 1992 |
| Priority date | — |
| Expiry date | Jun 4, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An anti-fuse structure characterized by a substrate, an oxide layer formed over the substrate having an opening formed therein, an amorphous silicon material disposed within the opening and contacting the substrate, and oxide spacers lining the walls of a recess formed within the amorphous silicon. The spacers prevent failures of the anti-fuse structures by covering cusps formed in the amorphous silicon material. The method of the present invention forms the above-described anti-fuse structure and further solves the problem of removing unwanted spacer material from areas outside of the anti-fuse structure locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.