Method for depositing dielectric layers
US5120680A · kind A · utility
38Cited by
10References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1990 |
| Grant date | Jun 9, 1992 |
| Priority date | — |
| Expiry date | Jul 19, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for forming a silicon dioxide layer on a substrate by radio-frequency deposition from a plasma comprising oxygen, argon, and tetraethyl orthosilicate (TEOS) or tetramethyl cyclotetrasiloxane (TMCTS). A negative bias is imparted to the substrate. The resulting ion bombardment induces surface migration. Because TEOS and TMCTS have a relatively high mean free path for surface migration, the filling of soft spots and key holes is promoted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.