Pang Dow Foo
20Patents
10h-index
34Co-inventors
71Inventor score
Filing activity: Feb 10, 1988 → Nov 14, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5616518A | Process for fabricating integrating circuits | Electricity | 186 | Expired |
| US5124014A | Method of forming oxide layers by bias ECR plasma deposition | Electricity | 90 | Expired |
| US6461902B1 | RF LDMOS on partial SOI substrate | Emerging Cross-Sectional Technologies | 48 | Expired |
| US5643838A | Low temperature deposition of silicon oxides for device fabrication | Electricity | 40 | Expired |
| US5120680A | Method for depositing dielectric layers | Emerging Cross-Sectional Technologies | 38 | Expired |
| US6436810B1 | Bi-layer resist process for dual damascene | Electricity | 26 | Expired |
| US6503847B2 | Room temperature wafer-to-wafer bonding by polydimethylsiloxane | Electricity | 15 | Expired |
| US5057455A | Formation of integrated circuit electrodes | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6495903B2 | Integrated circuit inductor | Electricity | 14 | Expired |
| US6007728A | Design of a novel tactile sensor | Physics | 12 | Expired |
| US6122975A | CMOS compatible integrated pressure sensor | Physics | 8 | Expired |
| US6489203B2 | Stacked LDD high frequency LDMOSFET | Electricity | 5 | Expired |
| US4871420A | Selective etching process | Electricity | 5 | Expired |
| US6383855B1 | High speed, low cost BICMOS process using profile engineering | Electricity | 5 | Expired |
| US6670272B2 | Method for reducing dishing in chemical mechanical polishing | Electricity | 4 | Expired |
| US6765300B1 | Micro-relay | Electricity | 4 | Expired |
| US6908825B2 | Method of making an integrated circuit inductor wherein a plurality of apertures are formed beneath an inductive loop | Electricity | 3 | Expired |
| US6664596B2 | Stacked LDD high frequency LDMOSFET | Electricity | 2 | Expired |
| US6855640B2 | Apparatus and process for bulk wet etch with leakage protection | Electricity | 2 | Expired |
| US6667516B2 | RF LDMOS on partial SOI substrate | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.