Selective etch method
US5122225A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 1990 |
| Grant date | Jun 16, 1992 |
| Priority date | — |
| Expiry date | Nov 21, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention discloses a method for selectively etching a first material at a faster rate than a second material, where both materials are incorporated on the surface of a semiconductor. The surface is disposed (step 100) in a plasma etcher. A reactant is flowed into the etcher (102). The etch agents are chosen so the chemical products created by a reaction between the etchant and the first material are volatile and the chemical products created by a reaction between the etchant and the second material are non-volatile. A reaction is then ignited (104) and the first material is etched (106). One embodiment discloses a method for forming a local interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.