Semiconductor memory device having first and second selecting lines for accessing memory cells
US5122857A · kind A · utility
9Cited by
10References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1991 |
| Grant date | Jun 16, 1992 |
| Priority date | — |
| Expiry date | Jan 8, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/906
Abstract
A static RAM having first word lines each defined by extended gate electrodes of MISFETs constituting memory cells, and second word lines which are separate from the first word lines. The RAM further has a wiring for supplying a fixed potential such as a ground potential to the memory cells, the wiring being formed from the same layer as that for forming the second word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.