Method of forming oxide layers by bias ECR plasma deposition
US5124014A · kind A · utility
90Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 1991 |
| Grant date | Jun 23, 1992 |
| Priority date | — |
| Expiry date | Apr 11, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming silicon dioxide layers by bias ECR is described. The layers are formed by reacting oxygen with TEOS or TMCTS. High-quality, void-free layerc can be formed over conductor patterns having high-aspect-ratio intermetallic spacings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.