Method for monitoring photoresist latent images
US5124216A · kind A · utility
53Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1990 |
| Grant date | Jun 23, 1992 |
| Priority date | — |
| Expiry date | Jul 31, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The formation of latent images in photoresist can be monitored during exposure without spurious images by directing a pulsed beam of monochromatic light onto a region of the layer being exposed and selectively detecting the diffracted light. Peak formation in the normalized diffracted intensity versus time curve indicates optimal exposure of the resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.