Bipolar transistor having external base region
US5124270A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 17, 1990 |
| Grant date | Jun 23, 1992 |
| Priority date | — |
| Expiry date | Sep 17, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/072
Abstract
A bipolar transistor is provided with an external base region. The bipolar transistor comprises a first semiconductor layer of a first conductivity type, the first semiconductor layer serving as a collector region, a second semiconductor layer of a second conductivity type, which is formed on the first semiconductor layer and includes a base region and an external base region located around the base region, a third semiconductor layer of the first conductivity type, which is formed on the second semiconductor layer and serves as an emitter region, a metal layer formed on the third semiconductor layer and serving as an emitter electrode, the metal layer including a first metal layer portion which is substantially as wide as the base region located in an intrinsic transistor region, and a second metal layer portion which is formed on the first metal layer portion and is wider than the first metal portion, a base electrode located on the external base region of the second semiconductor layer, and a collector electrode connected to the first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.