GaAs heterostructure metal-insulator-semiconductor integrated circuit technology
US5124762A · kind A · utility
84Cited by
3References
12Claims
0Family size
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Key dates
| Filing date | Dec 31, 1990 |
| Grant date | Jun 23, 1992 |
| Priority date | — |
| Expiry date | Dec 31, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
Abstract
Heterostructure metal insulator semiconductor integrated circuit technology resulting in, for instance, GaAs field-effect-transistors having much less gate current leakage and greater voltage range than like technology of the related art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.