Thomas E. Nohava
8Patents
4h-index
10Co-inventors
54Inventor score
Filing activity: Jul 6, 1982 → Aug 19, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5124762A | GaAs heterostructure metal-insulator-semiconductor integrated circuit technology | Electricity | 84 | Expired |
| US6483130B1 | Back-illuminated heterojunction photodiode | Emerging Cross-Sectional Technologies | 73 | Expired |
| US6818061B2 | Method for growing single crystal GaN on silicon | Electricity | 31 | Expired |
| US6137123A | High gain GaN/AlGaN heterojunction phototransistor | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7329895B2 | Dual wavelength detector | Electricity | 4 | Expired |
| US9140662B1 | Preventing stray currents in sensors in conductive media | Physics | 1 | Active |
| US4490441A | Encapsulated CDTe boules for multiblade wafering | Chemistry; Metallurgy | 1 | Expired |
| US4564494A | Encapsulant of CdTe boules for multiblade wafering | Chemistry; Metallurgy | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.