Semiconductor lithography methods using an ARC of organic material
US5126289A · kind A · utility
46Cited by
11References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 20, 1990 |
| Grant date | Jun 30, 1992 |
| Priority date | — |
| Expiry date | Jul 20, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An antireflection coating (16) for use with a photolithographic process comprises a layer of organic material that planarizes the surface upon which a photoresist layer (21) is deposited, is highly absorptive of deep ultraviolet actinic light, and can be plasma etched along with an underlying metal layer (11), thereby obviating the need for a separate step to remove the exposed antireflection coating prior to metal etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.