David Ziger
45Patents
12h-index
10Co-inventors
78Inventor score
Filing activity: Sep 8, 1987 → Dec 26, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5607800A | Method and arrangement for characterizing micro-size patterns | Physics | 121 | Expired |
| US5902703A | Method for measuring dimensional anomalies in photolithographed integrated circuits using overlay metrology, and masks therefor | Physics | 59 | Expired |
| US5126289A | Semiconductor lithography methods using an ARC of organic material | Emerging Cross-Sectional Technologies | 46 | Expired |
| US6498640B1 | Method to measure alignment using latent image grating structures | Physics | 32 | Expired |
| US5962173A | Method for measuring the effectiveness of optical proximity corrections | Physics | 26 | Expired |
| US6301008A | Arrangement and method for calibrating optical line shortening measurements | Physics | 20 | Expired |
| US4814243A | Thermal processing of photoresist materials | Physics | 20 | Expired |
| US5310457A | Method of integrated circuit fabrication including selective etching of silicon and silicon compounds | Electricity | 17 | Expired |
| US5472562A | Method of etching silicon nitride | Electricity | 16 | Expired |
| US5976741A | Methods for determining illumination exposure dosage | Physics | 13 | Expired |
| US6465322B2 | Semiconductor processing methods and structures for determining alignment during semiconductor wafer processing | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6566016B1 | Apparatus and method for compensating critical dimension deviations across photomask | Physics | 12 | Expired |
| US5780208A | Method and mask design to minimize reflective notching effects | Physics | 12 | Expired |
| US5982496A | Thin film thickness and optimal focus measuring using reflectivity | Physics | 11 | Expired |
| US6287972A | System and method for residue entrapment utilizing a polish and sacrificial fill for semiconductor fabrication | Electricity | 7 | Expired |
| US6716649B2 | Method for improving substrate alignment | Physics | 6 | Expired |
| US7096127B2 | Measuring flare in semiconductor lithography | Physics | 6 | Expired |
| US5830610A | Method for measuring alignment accuracy in a step and repeat system utilizing different intervals | Physics | 5 | Expired |
| US5205867A | Spin coating apparatus having a horizontally linearly movable wafer holder | Physics | 5 | Expired |
| US6590219B1 | Apparatus and method for forming photoresist pattern with target critical dimension | Physics | 5 | Expired |
| US7054007B2 | Calibration wafer for a stepper | Physics | 4 | Expired |
| US7099018B2 | Measurement of optical properties of radiation sensitive materials | Physics | 4 | Expired |
| US6800403B2 | Techniques to characterize iso-dense effects for microdevice manufacture | Physics | 4 | Expired |
| US7541121B2 | Calibration of optical line shortening measurements | Physics | 3 | Active |
| US6613589B2 | Method for improving substrate alignment | Physics | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.