Dielectrically isolated structure for use in soi-type semiconductor device
US5126817A · kind A · utility
25Cited by
2References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 12, 1990 |
| Grant date | Jun 30, 1992 |
| Priority date | — |
| Expiry date | Oct 12, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectrically isolated structure for use in an SOI-type semiconductor device according to the present invention comprises a substrate having an element-forming region formed therein on a first insulating film, the region being made of a first material, at least one trench formed in the element-forming region and extending to the first insulating film, second insulating films formed on side walls of the trench, and a film made of a second material, and embedded in only an upper portion of the trench such that a bottom portion of the trench is hollow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.