Semiconductor integrated circuit device with isolation grooves and protruding portions
US5128740A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1989 |
| Grant date | Jul 7, 1992 |
| Priority date | — |
| Expiry date | Nov 17, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
This invention relates to a semiconductor integrated circuit device including highly self-aligned bipolar transistors. The semiconductor integrated circuit device a semiconductor body at least a first protruding portion and a hollow portion, disposed as a trench. The hollow portion being adjacent to the first protruding portion and being lower than an upper surface of the first protruding portion and including an isolation groove which is formed along a side surface of the protruding portion and in self-alignment with a peripheral edge portion of the upper surface of the first protruding portion. The device also has insulating material formed on a surface of the hollow portion so as to fill the insulation groove, a first semiconductor region of a first conductivity type formed in the first protruding portion, a portion of said first semiconductor region being exposed to the side surface of the protruding portion, a second semiconductor region of a second conductivity type opposite to the first conductivity type formed in the first protruding portion on the first semiconductor region, a third semiconductor region of the second conductivity type formed in the first protruding portion…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.