Akihisa Uchida
22Patents
9h-index
53Co-inventors
78Inventor score
Filing activity: Oct 15, 1984 → Nov 17, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4949162A | Semiconductor integrated circuit with dummy pedestals | Electricity | 57 | Expired |
| US4746963A | Isolation regions formed by locos followed with groove etch and refill | Emerging Cross-Sectional Technologies | 26 | Expired |
| US5011788A | Process of manufacturing semiconductor integrated circuit device and product formed thereby | Emerging Cross-Sectional Technologies | 23 | Expired |
| US4907063A | Semiconductor body, and device formed therefrom, having grooves with silicon nitride on the groove surfaces | Emerging Cross-Sectional Technologies | 18 | Expired |
| US4819054A | Semiconductor IC with dual groove isolation | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5351211A | Semiconductor integrated circuit device having circuit inspection function | Physics | 16 | Expired |
| US5388073A | Semiconductor integrated circuit device and digital processor employing the same | Physics | 13 | Expired |
| US5141888A | Process of manufacturing semiconductor integrated circuit device having trench and field isolation regions | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7073147B2 | Method of manufacturing a semiconductor device | Electricity | 12 | Expired |
| US5200348A | Method of manufacturing semiconductor device with constant width deep groove isolation | Emerging Cross-Sectional Technologies | 9 | Expired |
| US4926378A | Bipolar static RAM having two wiring lines for each word line | Physics | 9 | Expired |
| US5214302A | Semiconductor integrated circuit device forming on a common substrate MISFETs isolated by a field oxide and bipolar transistors isolated by a groove | Electricity | 8 | Expired |
| US5029127A | Bipolar SRAM having word lines as vertically stacked pairs of conductive lines parallelly formed with holding current lines | Physics | 7 | Expired |
| US5177584A | Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same | Electricity | 6 | Expired |
| US4700464A | Method of forming trench isolation in an integrated circuit | Emerging Cross-Sectional Technologies | 6 | Expired |
| US4809052A | Semiconductor memory device | Electricity | 6 | Expired |
| US4853343A | Method for fabricating a semiconductor integrated circuit device having thick oxide films and groove etch and refill | Emerging Cross-Sectional Technologies | 6 | Expired |
| US4926235A | Semiconductor device | Electricity | 5 | Expired |
| US5084402A | Method of fabricating a semiconductor substrate, and semiconductor device, having thick oxide films and groove isolation | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5128740A | Semiconductor integrated circuit device with isolation grooves and protruding portions | Electricity | 2 | Expired |
| US9252793B2 | Semiconductor device | Electricity | 1 | Active |
| US9503018B2 | Semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.