Semiconductor integrated circuit and method of manufacturing same
US5128744A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1989 |
| Grant date | Jul 7, 1992 |
| Priority date | — |
| Expiry date | Sep 12, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor integrated circuit device having a fine multilayer interconnection structure, a wiring material such as tungsten is formed on a predetermined part of the interior of a wiring layer-forming groove formed in a flat inter-layer insulating film by selective deposition. The flat inter-layer insulating film has a laminate structure of two or more insulating films different in etching speed, and a (first) insulating film, underlying a (second) insulating film in which the wiring layer-forming groove of the inter-layer insulating film is formed, serves as an etching stopper to make the depth of the wiring layer-forming groove constant when forming the groove from etching. Consequently, the depth of the wiring layer-forming groove can be defined accurately by the thickness of a (second) insulating film formed by deposition, and the film thickness between wiring layers can be accurately defined by the thickness of an insulating film formed by deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.