Isamu Asano
88Patents
21h-index
108Co-inventors
91Inventor score
Filing activity: Jul 23, 1976 → Nov 19, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6294420A | Integrated circuit capacitor | Electricity | 211 | Expired |
| US6737318B2 | Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring | Electricity | 105 | Expired |
| US5504029A | Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs | Electricity | 79 | Expired |
| US6028360A | Semiconductor integrated circuit device in which a conductive film is formed over a trap film which in turn is formed over a titanium film | Electricity | 68 | Expired |
| US7502252B2 | Nonvolatile semiconductor memory device and phase change memory device | Electricity | 63 | Expired |
| US6096597A | Method for fabricating an integrated circuit structure | Electricity | 62 | Expired |
| US6483136B1 | Semiconductor integrated circuit and method of fabricating the same | Electricity | 59 | Expired |
| US5153685A | Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring | Electricity | 57 | Expired |
| US6258649A | Semiconductor integrated circuit device and method of manufacturing the same | Electricity | 56 | Expired |
| US6215144A | Semiconductor integrated circuit device, and method of manufacturing the same | Electricity | 41 | Expired |
| US6168985A | Semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity and method of manufacturing same | Electricity | 35 | Expired |
| US6197702A | Fabrication process of a semiconductor integrated circuit device | Electricity | 33 | Expired |
| US6649956B2 | Semiconductor integrated circuit device and manufacturing method thereof | Electricity | 32 | Expired |
| US6696337B2 | Method of manufacturing a semiconductor integrated circuit device having a memory cell array and a peripheral circuit region | Electricity | 32 | Expired |
| US5128744A | Semiconductor integrated circuit and method of manufacturing same | Electricity | 30 | Expired |
| US7042038B2 | Semiconductor integrated circuit device and manufacturing method thereof | Electricity | 28 | Expired |
| US5202275A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6756262B1 | Semiconductor integrated circuit device having spaced-apart electrodes and the method thereof | Electricity | 24 | Expired |
| US5981369A | Semiconductor integrated circuit device and process for manufacturing the same | Electricity | 24 | Expired |
| US5331191A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6329681A | Semiconductor integrated circuit device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5972769A | Self-aligned multiple crown storage capacitor and method of formation | Electricity | 21 | Expired |
| US6037207A | Method of manufacturing semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity | Electricity | 19 | Expired |
| US6621110B1 | Semiconductor intergrated circuit device and a method of manufacture thereof | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7582889B2 | Electrically rewritable non-volatile memory element and method of manufacturing the same | Electricity | 17 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.