Semiconductor device with thin film resistor
US5128745A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1990 |
| Grant date | Jul 7, 1992 |
| Priority date | — |
| Expiry date | Jul 3, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
Abstract
The semiconductor device is integrated with a thin film resistor composed of a resistive thin film. A contact hole is covered with the resistive thin film through which electrical contact is made to a substrate or a gate electrode so as to facilitate formation of an inter-layer insulating film between the thin film resistor and a patterned metal film. Electrical connection is effected between the thin film resistor and the patterned metal film made of aluminium through an impurity-doped region of high density, or a pair of polysilicon layers are disposed on upper and lower faces of the thin film resistor. By such construction, excessive removal of the thin film resistor can be prevented, which would be otherwise caused due to overetching during the course of etching of an insulating film over the thin film transistor prior to the formation of the patterned aluminium film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.