Hiroaki Takasu
65Patents
19h-index
39Co-inventors
84Inventor score
Filing activity: Jul 3, 1990 → Jan 11, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5637187A | Light valve device making | Physics | 124 | Expired |
| US6067062A | Light valve device | Physics | 121 | Expired |
| US5233211A | Semiconductor device for driving a light valve | Emerging Cross-Sectional Technologies | 100 | Expired |
| US5574292A | Semiconductor device with monosilicon layer | Physics | 95 | Expired |
| US6191476A | Semiconductor device | Electricity | 78 | Expired |
| US6304243A | Light valve device | Electricity | 78 | Expired |
| US5982002A | Light valve having a semiconductor film and a fabrication process thereof | Electricity | 61 | Expired |
| US5585304A | Method of making semiconductor device with multiple transparent layers | Emerging Cross-Sectional Technologies | 60 | Expired |
| US5347154A | Light valve device using semiconductive composite substrate | Emerging Cross-Sectional Technologies | 57 | Expired |
| US5434433A | Semiconductor device for a light wave | Physics | 53 | Expired |
| US5618739A | Method of making light valve device using semiconductive composite substrate | Electricity | 50 | Expired |
| US5572045A | Light valve device using semiconductive composite substrate | Emerging Cross-Sectional Technologies | 48 | Expired |
| US5759878A | Method of fabricating semiconductor device having epitaxially grown semiconductor single crystal film | Emerging Cross-Sectional Technologies | 39 | Expired |
| US5463238A | CMOS structure with parasitic channel prevention | Electricity | 38 | Expired |
| US5672518A | Method of fabricating semiconductor device having stacked layered substrate | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5926699A | Method of fabricating semiconductor device having stacked layer substrate | Emerging Cross-Sectional Technologies | 33 | Expired |
| US5486708A | Light valve device using semiconductive composite substrate | Emerging Cross-Sectional Technologies | 32 | Expired |
| US6040200A | Method of fabricating semiconductor device having stacked-layered substrate | Emerging Cross-Sectional Technologies | 23 | Expired |
| US5602408A | Semiconductor device having polycrystalline silicon load devices | Electricity | 19 | Expired |
| US5728591A | Process for manufacturing light valve device using semiconductive composite substrate | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5128745A | Semiconductor device with thin film resistor | Electricity | 19 | Expired |
| US6369409B1 | Semiconductor device and method of manufacturing the same | Electricity | 18 | Expired |
| US5534722A | Insulator substrate for a light valve device having an electrostatic protection region | Physics | 17 | Expired |
| US6187605A | Method of forming a semiconductor device for a light valve | Physics | 16 | Expired |
| USRE36836E | Semiconductor device for driving a light valve | General | 15 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.