Semiconductor memory drive
US5128896A · kind A · utility
9Cited by
0References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 1990 |
| Grant date | Jul 7, 1992 |
| Priority date | — |
| Expiry date | Jan 10, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4091
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a semiconductor memory device comprising memory cells in which first and second potentials correspond to the logic values "0" and "1", the first potential is closer to the second potential than the potential of unselected word lines, by 0.3 V or more. The pull-up transistor is of the N-type, and the pull-down transistor is of the P-type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.