Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
US5130269A · kind A · utility
85Cited by
13References
4Claims
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Key dates
| Filing date | Apr 25, 1989 |
| Grant date | Jul 14, 1992 |
| Priority date | — |
| Expiry date | Apr 25, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminum arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.