Process for defining and forming an active region of very limited dimensions in a semiconductor layer
US5130272A · kind A · utility
3Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1991 |
| Grant date | Jul 14, 1992 |
| Priority date | — |
| Expiry date | Jul 9, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/942
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Along the outline of a first doped region, a first mask is formed. The mask is made up of a dielectric opposed to the oxygen diffusion. Another mask is created within this first mask, using a process of selective thermal oxidation. The second mask is used to implant dopant in a second region which will only be defined along the outlines of the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.