Giuseppe Ferla
67Patents
14h-index
40Co-inventors
84Inventor score
Filing activity: Apr 27, 1979 → Sep 30, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6365930B1 | Edge termination of semiconductor devices for high voltages with resistive voltage divider | Electricity | 116 | Expired |
| US5817546A | Process of making a MOS-technology power device | Emerging Cross-Sectional Technologies | 45 | Expired |
| US6228719A | MOS technology power device with low output resistance and low capacitance, and related manufacturing process | Electricity | 42 | Expired |
| US5670392A | Process for manufacturing high-density MOS-technology power devices | Emerging Cross-Sectional Technologies | 36 | Expired |
| US4667393A | Method for the manufacture of semiconductor devices with planar junctions having a variable charge concentration and a very high breakdown voltage | Emerging Cross-Sectional Technologies | 34 | Expired |
| US4277291A | Process for making CMOS field-effect transistors | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5900662A | MOS technology power device with low output resistance and low capacitance, and related manufacturing process | Electricity | 28 | Expired |
| US5631483A | Power device integrated structure with low saturation voltage | Electricity | 27 | Expired |
| US5981343A | Single feature size mos technology power device | Electricity | 22 | Expired |
| US5118635A | Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6051862A | MOS-technology power device integrated structure | Electricity | 14 | Expired |
| US5933733A | Zero thermal budget manufacturing process for MOS-technology power devices | Electricity | 14 | Expired |
| US5981998A | Single feature size MOS technology power device | Electricity | 14 | Expired |
| US5250821A | Electronic power device having plural elementary semiconductor components connected in parallel | Electricity | 14 | Expired |
| US5811335A | Semiconductor electronic device with autoaligned polysilicon and silicide control terminal | Electricity | 13 | Expired |
| US5933734A | High speed MOS-technology power device integrated structure, and related manufacturing process | Electricity | 12 | Expired |
| US5874338A | MOS-technology power device and process of making same | Electricity | 12 | Expired |
| US5065213A | Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6140679A | Zero thermal budget manufacturing process for MOS-technology power devices | Electricity | 11 | Expired |
| US6054737A | High density MOS technology power device | Electricity | 10 | Expired |
| US5841167A | MOS-technology power device integrated structure | Electricity | 10 | Expired |
| US5667905A | Electro-luminescent material, solid state electro-luminescent device and process for fabrication thereof | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5141883A | Process for the manufacture of power-MOS semiconductor devices | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5985721A | Single feature size MOS technology power device | Electricity | 8 | Expired |
| US5883412A | Low gate resistance high-speed MOS-technology integrated structure | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.