Improved ion implantation using a variable mass resolving system
US5130552A · kind A · utility
20Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1990 |
| Grant date | Jul 14, 1992 |
| Priority date | — |
| Expiry date | Dec 17, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system is modified to allow variation in the size of the aperture of the mass resolving system, thereby allowing more ions of one mass or ion of more than one mass, such as isotopes, to pass through said opening. Including all isotopes of the desired dopant ions to be collected increases beam current, and consequently the throughput of the implantation process, reduces contamination, and improves the dosage control.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.